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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION *With TO-202 package *High power dissipation *Complement to type 2SC2483 APPLICATIONS *For high voltage and general purpose amplification PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -6 -1.5 -0.5 2 UNIT V V V A A PC Collector power dissipation TC=25 15 175 -55~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1195 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 160 V VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50m A -1.0 V VBE Base-emitter on voltage IC=-5mA ; VCE=-5V -0.7 V hFE-1 DC current gain IC=-200mA ; VCE=-5V 60 200 hFE-2 DC current gain IC=-500mA ; VCE=-5V 40 ICBO Collector cut-off current VCB=-150V; IE=0 -1 A IEBO Emitter cut-off current VEB=-6V; IC=0 -1 A COB Output capacitance IE=0; VCB=-10V;f=1MHz 35 pF fT Transition frequency IE=-100mA ; VCB=-5V 15 50 MHz hFE classifications R 60-120 O 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1195 Fig.2 outline dimensions 3 |
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